power MOSFET

Application of Power MOSFET Inverter in AC Servo System

功率MOSFET逆变器在交流伺服系统中的应用

Hitachi High-Effective DC/ DC Power Control IC and Power MOSFET

日立高效率DC/DC电源控制IC和功率MOSFET

Compared with various power devices, power MOSFET were employed as the switches of two inverters.

分析对比了各种常用电力电子器件，选择了功率MOSFET作为一次逆变和二次逆变开关元件。

Analysis of Power MOSFET Resonant Gate Drive Technology in Power Electronics

电力电子功率MOSFET管谐振驱动技术的分析

It is pointed out through the analysis of calculating data that the key to improve efficiency at the same output power is to decrease the peak current and rms current of power switches or the on-resistance of MOSFET and windings.

通过对计算数据的分析，指出了进一步提高效率的关键在于输出相同功率时降低功率管的电流峰值和有效值，减小绕组和MOSFET的导通电阻。

Simplified Design Method for Power MOSFET Passive Driving Circuit

MOS无源驱动电路的简化设计方法

As a practical junction termination techonology, field plate ( FP) has been widely used in power MOSFET, HVIC and SPIC with the merits of small occupied area, simple manufacturing process and so on.

场板技术作为一种实用的结终端技术，因其所占面积小、制造工艺简单等优点，在功率MOS器件、高压集成电路和智能功率集成电路中得到了广泛的应用。

The technology of synchronous rectification is to replace rectifying diode with power MOSFET which has low turn-on resistance, so it can decrease the dissipation of rectifier circuit greatly, improve the efficiency of DC/ DC converter and meet the needs of low-voltage and large current rectifier.

同步整流技术采用通态电阻极低的电力MOSFET来取代整流二极管，能大大降低整流电路的损耗，提高DC/DC变换器的效率，满足低压、大电流整流器的需要。

Gate Charge Analysis and Structure Improvement of Power MOSFET

POWER MOSFET栅电荷分析及结构改进

IGBT is an electronic device in the early eighties, It belongs to a new power semiconductor devices. The characteristic of voltage input is along with the characteristic of low resistance on-state output. It can replace the GTR and power MOSFET devices in many industrial fields.

IGBT最早出现于上世纪八十年代初，被归为新型半导体功率器件，可以在很多工业领域替代GTR和功率MOSFT等器件。

Design of Power MOSFET Driver Circuit for High Frequency Induction Heating Supply

高频感应加热电源功率器件MOSFET驱动电路

Study on Passive Snubber Circuit with Energy Recovery for Power MOSFET

功率MOSFET馈能式缓冲电路的研究

A Simple and Practical Drive Circuit for Power MOSFET

简单实用的功率MOSFET驱动电路

This paper brings forward a new method of substituting power MOSFET whose switch time is shorter for thyristor in developing the pulsed fast discharge power supply of sulfur dimmer.

在研制硫双原子分子激光器脉冲电源时，采用了开通速度更快的功率MOSFET替代了快速晶闸管。

A new type power MOSFET lower on-resistance and gate charge.

新型功率MOSFET——QFET带有低通态电阻和栅极电荷.

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

Study on Solid State Modulator based on Power MOSFET Device

基于MOSFET的固体调制器研究

Power electronics' initial product is rectifier, thyristor, power MOSFET, power GTR and other products. However, these products all have their own shortcomings.

电力电子器件最初的产品是整流管、晶闸管、功率MOSFET、大功率GTR等产品、但是这些产品都有着自身的缺点。

Design of Measuring Power MOSFET Parameter Instrument

功率MOSFET参数测试仪的设计

All those factors constitute a challenge to the reliability of power MOSFET.

这些因素对功率MOSFET的可靠性提出了挑战。

this paper demonstrates a novel battery constant current discharging device. the device discards traditional resistance discharging idea and it takes the power mosfet as main power converter. it improves battery discharging efficiency and reduces volume, weight and price.

介绍了一种新颖的蓄电池恒流放电装置，该放电装置摒弃了传统电阻放电思想，采用功率MOSFET作为主要的能量转化器件，提高了蓄电池放电效率，减小了放电装置的体积、重量和成本。